热磷离子注入锗锡合金的自晶化及降低接触电阻率

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839659

Lanxiang Wang, B. Liu, X. Gong, P. Guo, Qian Zhou, L. Chua, W. Zou, C. Hatem, T. Henry, Y. Yeo

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引用次数: 1

摘要

研究了磷离子(P+)注入温度对外延GeSn合金材料性能和GeSn n+/ P二极管电学特性的影响。热P+种植在种植过程中保持GeSn的单晶度。此外，与室温下植入的样品相比，在高温下植入的样品在450°C下进行RTA 3分钟获得了更低的接触电阻率，这表明P掺杂剂的活化程度更高。

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Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy

We investigated the effect of phosphorus ion (P+) implant temperature on the material properties of epitaxial GeSn alloy and the electrical characteristics of GeSn n+/p diodes. Hot P+ implant maintains the single crystallinity of GeSn during implant. In addition, samples implanted at elevated temperature followed by a subsequent RTA at 450 °C for 3 minutes achieve a lower contact resistivity compared with those implanted at room temperature, indicating a higher P dopant activation.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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