用于VLSI的栅极工程SOI MOSFET分析

2013 International Mutli-Conference on Automation, Computing, Communication, Control and Compressed Sensing (iMac4s) Pub Date : 2013-03-22 DOI:10.1109/IMAC4S.2013.6526464

M. S. A. Ramya, D. Nirmal, S. Soman, P. P. Nair, I. Jeba

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引用次数: 3

摘要

利用Sentaurus TCAD工具对双(DM)三栅极绝缘体上硅(SOI)金属氧化物半导体场效应晶体管(MOSFET)进行了设计和仿真，并对其各项参数进行了分析。双材料三门MOSFET具有更好的导通电流和更小的漏电流，从而提高了器件的性能。得到的导通电流为2.301×10-5 A/μm，漏电流为1.793×10-12 A/μm，获得了理想的开/关比。这里使用的技术是22nm。

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Analysis of gate engineered SOI MOSFET for VLSI application

The Dual (DM) Trigate Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is designed and simulated using Sentaurus TCAD tools and its various parameters are analyzed. The Dual Material Trigate MOSFET has better ON current and reduced leakage current which results in better performance of the device. The ON current obtained is 2.301×10-5 A/μm, the leakage current is 1.793×10-12 A/μm and the perfect ON/OFF ratio is obtained. The technology used here is 22nm.

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来源期刊

2013 International Mutli-Conference on Automation, Computing, Communication, Control and Compressed Sensing (iMac4s)

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