高频硅通孔(TSV)失效分析

2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems Pub Date : 2011-12-12 DOI:10.1109/EPEPS.2011.6100237

Joohee Kim, Jonghyun Cho, J. Pak, Joungho Kim, J. Yook, J. C. Kim

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引用次数: 17

摘要

尽管3D集成电路具有许多优点，但在3D集成电路制造过程中所经历的良率损失限制了3D集成电路产品的商业化。在本研究中，我们提出了一种新的TSV故障分析方法，并对TSV故障进行电气分析，以检测基于TSV的三维集成电路中的故障及其位置。

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High-frequency through-silicon Via (TSV) failure analysis

Despite the many advantages of 3D ICs, the yield loss experienced during the 3D IC fabrication process limits the commercialization of 3D IC products. In this study, we propose a novel method for TSV failure analysis and analyze TSV failures electrically to detect failures and their locations in TSV-based 3D IC.

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来源期刊

2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems

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