硒金属结构中的二次谐波产生

I. Mihailova, V. Gerbreders, Ē. Sļedevskis, V. Kolbjonoks, E. Tamanis
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引用次数: 4

摘要

本文研究了在波长800 ~ 1000 nm的飞秒辐射(180 fs, 80 MHz)照射下,硒-金属(Cu)薄膜结构的二次谐波产生过程。在真空条件下,将硒和铜连续热蒸发在玻璃衬底上,得到了硒-铜结构。对薄膜成分进行微量分析,测定薄膜中铜的含量。在85℃的惰性气氛中退火,使蒸发态硒铜结构结晶。对蒸发薄膜和退火薄膜进行了研究。实验是在共聚焦显微镜[1]下进行的,其中注入了飞秒激光。然后确定所讨论的结构的光敏性为入射辐射[2]的强度和波长的函数。二次谐波强度随铜层厚度的变化而变化。我们发现加入少量的Cu增加了反射SH强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Second harmonic generation in selenium-metal structures
The article examines the processes of second harmonic generation (SHG) when selenium-metal (Cu) film structures are illuminated by femtosecond radiation (180 fs, 80 MHz) at wavelength 800 - 1000 nm. Selenium-copper structures were obtained by successive thermal evaporation of selenium and copper onto the glass substrate in vacuum. Microanalysis of the film composition was performed to determine amount of copper in thin films. The as-evaporated selenium-copper structures were crystallised by annealing in inert atmosphere at temperature 85°C. Just evaporated as well as annealed thin films were explored. The experiment was performed by confocal microscope [1] where the femtosecond radiation from laser was injected. A photosensitivity of structures in question was then determined as functions of intensity and wavelength of the incident radiation [2]. Second harmonic intensity dependence on thickness of Cu layer was also observed. We found out that adding small amount of Cu increases reflected SH intensity.
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