具有宽带输入匹配的2-3 GHz高增益和高线性电流复用LNA

Guoxiao Cheng, Zhiqun Li, Lei Luo, Zengqi Wang
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引用次数: 3

摘要

采用0.18 μm CMOS技术,设计了一种具有电流复用、级联l匹配输入网络和多门控晶体管方法的宽带2- 3ghz三级低噪声放大器(LNA)。采用电流复用拓扑实现低功耗,同时获得高增益和低噪声。采用级联l匹配输入网络,增强输入匹配带宽。MGTR用于提高线性性能。布局后仿真结果显示,最大功率增益为28.7 dB,在1.8-6.5 GHz范围内具有良好的输入匹配,三阶输入截距点(IIP3)高至10.4 dBm。采用3v电源时,噪声系数在2ghz范围内为3.1 ~ 3.3 dB,功耗为6.2 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 2–3 GHz high gain and high linearity current-reused LNA with wideband input matching
A wideband 2-3 GHz three-stage low noise amplifier (LNA) featuring current reuse, cascaded L-match input network, and multiple gated transistors method (MGTR) is designed in 0.18-μm CMOS technology. The current-reused topology is adopted to fulfill low power consumption, meanwhile, high gain and low noise are obtained. The cascaded L-match input network is used to enhance the input matching bandwidth. The MGTR is utilized to improve the linearity performance. Post-layout simulated results present a maximum power gain of 28.7 dB, a good input matching across 1.8-6.5 GHz and a high third-order input intercept point (IIP3) of-10.4 dBm. A noise figure (NF) of 3.1-3.3 dB is achieved within 2-3 GHz with a power dissipation of 6.2 mA from a 3 V power supply.
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