确保电路稳健性和卓越的硅质量的方法,同时在高生产率的过程修订中激增设计

N. Srimal
{"title":"确保电路稳健性和卓越的硅质量的方法,同时在高生产率的过程修订中激增设计","authors":"N. Srimal","doi":"10.1109/ISQED.2010.5450532","DOIUrl":null,"url":null,"abstract":"This paper describes methodologies developed to ensure circuit robustness and silicon quality when a high performance microprocessor design is proliferated across process revisions. The paper describes innovative techniques and solutions based on data obtained from post silicon experiments and simulations that can be advantageous to the designers. The paper focuses on the areas of leakage control, noise tolerance, min-delay analysis.","PeriodicalId":369046,"journal":{"name":"2010 11th International Symposium on Quality Electronic Design (ISQED)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Methodology to ensure circuit robustness and exceptional silicon quality while proliferating designs across process revisions with high productivity\",\"authors\":\"N. Srimal\",\"doi\":\"10.1109/ISQED.2010.5450532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes methodologies developed to ensure circuit robustness and silicon quality when a high performance microprocessor design is proliferated across process revisions. The paper describes innovative techniques and solutions based on data obtained from post silicon experiments and simulations that can be advantageous to the designers. The paper focuses on the areas of leakage control, noise tolerance, min-delay analysis.\",\"PeriodicalId\":369046,\"journal\":{\"name\":\"2010 11th International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 11th International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2010.5450532\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2010.5450532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文描述了开发的方法,以确保电路稳健性和硅的质量,当一个高性能微处理器设计是跨越工艺修订扩散。本文描述了基于从硅后实验和模拟中获得的数据的创新技术和解决方案,这些技术和解决方案对设计人员有利。本文主要从泄漏控制、噪声容忍、最小延迟分析等方面进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Methodology to ensure circuit robustness and exceptional silicon quality while proliferating designs across process revisions with high productivity
This paper describes methodologies developed to ensure circuit robustness and silicon quality when a high performance microprocessor design is proliferated across process revisions. The paper describes innovative techniques and solutions based on data obtained from post silicon experiments and simulations that can be advantageous to the designers. The paper focuses on the areas of leakage control, noise tolerance, min-delay analysis.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信