亚微米碳化硅CMOS智能电源应用

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764121

K. Kornegay

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引用次数: 3

摘要

本文介绍了用于智能电源应用的碳化硅(SiC)亚微米CMOS技术的发展。NMOS晶体管的通道长度为0.5 /spl mu/m，而PMOS晶体管的通道长度为0.8 /spl mu/m。还制作了数字逻辑电路，并表现出纳秒级的开关性能。最后，研究了寄生串联电阻等性能限制因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Submicron silicon carbide CMOS for smartpower applications

This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 /spl mu/m (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 /spl mu/m channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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