H. Pomp, P. Woerlee, R. Woltjer, G. Paulzen, H. Lifka, A. Kuiper, J. D. de Zaldivar, S. Vecsernyes
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Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS
For deep-submicron CMOS transistors and FLOTOX E/sup 2/PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N/sup 2/O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.<>
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