直流磁控溅射制备CdS/CdTe薄膜异质体系的固溶体研究

2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2018-09-01 DOI:10.1109/NAP.2018.8915293

A. I. Dobrozhan, G. Kopach, R. Mygushchenko, G. Khrypunov, M. M. Harchenko, Olesia V. Polezhaeva

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引用次数: 1

摘要

研究了直流磁控溅射物理凝结模式和工艺凝结模式对生长的CdS和CdTe薄膜、CdS/CdTe薄膜异质体系的晶体结构和光学性能的影响。薄膜CdS/CdTe异质体系的传统氯化物处理导致CdTe基层重结晶及其纤锌矿-闪锌矿相变。Cl处理后CdTe的带隙增大到1.5 eV，而cd /CdTe异质体系的带隙减小到1.45 eV，这是由于在cd /CdTe的界面边界处形成了$\mathrm{CdS}_{\mathrm{x}}\mathrm{Te}_{\mathrm{1-x}}$的固溶体。利用光学研究数据计算了化学计量参数$\ mathm {x}=0,1\pm 0,01$的值。

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Study Solid Solutions in CdS/CdTe Thin Films Heterosystems Obtaine by DC Magnetron Sputtering

The influence of physical and technological condensation mode by direct current magnetron sputtering on the crystal structure and optical properties of grown CdS and CdTe films, CdS/CdTe thin films heterosystems was investigated. Traditional chloride treatment of thin-film CdS/CdTe heterosystem leads to recrystallization of CdTe basic layer and its wurtzite-sphalerite phase transition. After Cl treatment a bandgap in CdTe increases up to 1.5 eV, For CdS/CdTe heterosystem a decrease of a bandgap to 1.45 eV is observed which is determined by formation of solid solutions of $\mathrm{CdS}_{\mathrm{x}}\mathrm{Te}_{\mathrm{1-x}}$ at the interphase boundary of CdS/CdTe. The value of the stoichiometric parameter $\mathrm{x}=0,1\pm 0,01$ was calculated using the optical researches data.

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2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP)

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