具有Ni电极的GeO2/PZT阻性随机存取存储器器件

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628194

K. Chou, Chun‐Hu Cheng, A. Chin

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引用次数: 0

摘要

我们报道了一种使用堆叠GeO2和PZT的电阻随机存取存储器(RRAM)。在单极模式下，Ni/GeO2/PZT/TaN RRAM表现出良好的直流循环2×103周期，85°C保持率和约120倍的大电阻窗口，优于不含共电键介电体GeO2的单层Ni/PZT/TaN RRAM。

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GeO2/PZT resistive random access memory devices with Ni electrode

We report a resistive random-access memory (RRAM) using stacked GeO₂ and PZT. Under unipolar mode operation, the Ni/GeO₂/PZT/TaN RRAM shows a good DC cycling of 2×10³ cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO₂.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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