基于移动电荷载波的4H-21 DNTT建模及OTFT结构分析

2021 IEEE 2nd International Conference on Technology, Engineering, Management for Societal impact using Marketing, Entrepreneurship and Talent (TEMSMET) Pub Date : 2021-12-02 DOI:10.1109/temsmet53515.2021.9768714

Shubham Dadhich, G. Mathur, A. Dwivedi

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引用次数: 0

摘要

对osc - p型的深入研究已经产生了足够的流动性和开关关系。薄膜晶体管在新技术和传统技术中都有广泛的应用。本文基于我们开发的4H-21 DNTT OTFT的TCAD模型进行了结构分析。该报告主要基于无序描述和载流子重组。所报道的模型包括带隙建模和深和尾DOS(状态密度)。用实验数据对设计进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobile Charge Carrier Based Modeling of 4H–21 DNTT and Structure Analysis of OTFT

Intensive research on the OSC-P-type has resulted in sufficient mobility and an on-off relationship. Thin Film Transistors have a pervasive presence in novel and traditional technologies. This paper presents structure analysis based on our developed TCAD model of 4H-21 DNTT OTFT. The report is primarily based on disorder description and charge carrier recombination. The reported model has included Band- Gap modling and deep and tail DOS (Density of State). The design is tested with experimental figures.

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2021 IEEE 2nd International Conference on Technology, Engineering, Management for Societal impact using Marketing, Entrepreneurship and Talent (TEMSMET)

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