压电MEMS在CMOS上三维单片集成的模级加工

Aida R. Colón-Berríos, H. Edrees, Daniel de Godoy, P. Kinget, I. Kymissis
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引用次数: 2

摘要

smr和fbar允许各种各样的应用,如红外和质量传感器,RF滤波器和信号发生器。通过将器件直接集成到CMOS上,可以消除键合和附着寄生,从而可以针对每个应用优化设计。在研究环境中使用全晶圆是不符合成本效益的,开发一种允许使用mpw的模具工艺对研究环境有很大的好处。在这项工作中,我们展示了几种允许使用小模具进行3D集成的技术,并展示了这些技术对压电MEMS结构的价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Die-level processing for 3-D monolithic integration of piezoelectric MEMS on CMOS
SMRs and FBARs allow for a wide variety of applications such as IR and mass sensors, RF filters, and signal generators. By integrating devices directly on CMOS, bonding and attachment parasitics can be eliminated, permitting the optimization of the design for each application. Using full wafers in a research environment is not cost-effective and developing a die process that allows the use of MPWs is of great benefit for research environments. In this work, we demonstrate several of the techniques that allow for 3D integration using small dies, and show the value of these techniques for piezoelectric MEMS structures.
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