Aida R. Colón-Berríos, H. Edrees, Daniel de Godoy, P. Kinget, I. Kymissis
{"title":"压电MEMS在CMOS上三维单片集成的模级加工","authors":"Aida R. Colón-Berríos, H. Edrees, Daniel de Godoy, P. Kinget, I. Kymissis","doi":"10.1109/S3S.2017.8309207","DOIUrl":null,"url":null,"abstract":"SMRs and FBARs allow for a wide variety of applications such as IR and mass sensors, RF filters, and signal generators. By integrating devices directly on CMOS, bonding and attachment parasitics can be eliminated, permitting the optimization of the design for each application. Using full wafers in a research environment is not cost-effective and developing a die process that allows the use of MPWs is of great benefit for research environments. In this work, we demonstrate several of the techniques that allow for 3D integration using small dies, and show the value of these techniques for piezoelectric MEMS structures.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Die-level processing for 3-D monolithic integration of piezoelectric MEMS on CMOS\",\"authors\":\"Aida R. Colón-Berríos, H. Edrees, Daniel de Godoy, P. Kinget, I. Kymissis\",\"doi\":\"10.1109/S3S.2017.8309207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SMRs and FBARs allow for a wide variety of applications such as IR and mass sensors, RF filters, and signal generators. By integrating devices directly on CMOS, bonding and attachment parasitics can be eliminated, permitting the optimization of the design for each application. Using full wafers in a research environment is not cost-effective and developing a die process that allows the use of MPWs is of great benefit for research environments. In this work, we demonstrate several of the techniques that allow for 3D integration using small dies, and show the value of these techniques for piezoelectric MEMS structures.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8309207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8309207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Die-level processing for 3-D monolithic integration of piezoelectric MEMS on CMOS
SMRs and FBARs allow for a wide variety of applications such as IR and mass sensors, RF filters, and signal generators. By integrating devices directly on CMOS, bonding and attachment parasitics can be eliminated, permitting the optimization of the design for each application. Using full wafers in a research environment is not cost-effective and developing a die process that allows the use of MPWs is of great benefit for research environments. In this work, we demonstrate several of the techniques that allow for 3D integration using small dies, and show the value of these techniques for piezoelectric MEMS structures.