射频MEMS开关锚的von Mises应力研究

2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI:10.1109/SMICND.2015.7355213

G. Boldeiu, D. Vasilache, V. Moagar, A. Stefanescu, G. Ciuprina

{"title":"射频MEMS开关锚的von Mises应力研究","authors":"G. Boldeiu, D. Vasilache, V. Moagar, A. Stefanescu, G. Ciuprina","doi":"10.1109/SMICND.2015.7355213","DOIUrl":null,"url":null,"abstract":"In this paper an analysis of the von Mises stress in the RF MEMS switch structures is presented. This study was performed to analyze and optimize the stress in the anchors area for switch structures addressed to K and W frequency bands. Different types of anchors were taken into consideration and a comparison of von Mises stress has been performed. Optimization showed that it is possible to reduce stress up to more than 80% of its baseline, to the values much smaller than the breaking coefficient (100Mpa).","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Study of the von Mises stress in RF MEMS switch anchors\",\"authors\":\"G. Boldeiu, D. Vasilache, V. Moagar, A. Stefanescu, G. Ciuprina\",\"doi\":\"10.1109/SMICND.2015.7355213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper an analysis of the von Mises stress in the RF MEMS switch structures is presented. This study was performed to analyze and optimize the stress in the anchors area for switch structures addressed to K and W frequency bands. Different types of anchors were taken into consideration and a comparison of von Mises stress has been performed. Optimization showed that it is possible to reduce stress up to more than 80% of its baseline, to the values much smaller than the breaking coefficient (100Mpa).\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文对射频MEMS开关结构中的von Mises应力进行了分析。本研究针对开关结构在K和W频段的锚固区域进行了应力分析和优化。考虑了不同类型的锚，并进行了von Mises应力的比较。优化表明，可以将应力降低到基线的80%以上，远小于断裂系数(100Mpa)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Study of the von Mises stress in RF MEMS switch anchors

In this paper an analysis of the von Mises stress in the RF MEMS switch structures is presented. This study was performed to analyze and optimize the stress in the anchors area for switch structures addressed to K and W frequency bands. Different types of anchors were taken into consideration and a comparison of von Mises stress has been performed. Optimization showed that it is possible to reduce stress up to more than 80% of its baseline, to the values much smaller than the breaking coefficient (100Mpa).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Semiconductor Conference (CAS)

自引率

0.00%

发文量