一种新颖的n沟道MOSFET，具有集成肖特基和无内部pn结

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240292

A. Mirchandani, N. Thapar, T. Boden, R. Sodhi, D. Kinzer

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引用次数: 6

摘要

本文提出了一种新的MOSFET结构，在每个单元格中都有一个集成的肖特基结，在电流通路中没有p-n结。这消除了注入反向恢复电荷，同时提供了一个低正向电压降反并联肖特基二极管。导通状态下的栅极控制电流通过沿沟槽侧壁形成的累积沟道区域传导。对于4.5 V和10V的栅极偏置，分别实现了10.6 m/spl Omega/-mm/sup 2/和7.6 m/spl Omega/-mm/sup 2/的导通电阻，正向阻断电压超过30 V。再加上没有反向恢复电荷，使该器件非常适合高频DC-DC转换器应用。

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A novel n-channel MOSFET featuring an integrated Schottky and no internal p-n junction

This paper presents a new MOSFET structure with an integrated Schottky junction in every unit cell and with no p-n junction in the current flow path. This eliminates the injected reverse recovery charge while providing a low forward voltage drop anti-parallel Schottky diode. Gate controlled current conduction in the on-state takes place through an accumulated channel region formed along the trench sidewall. A specific on-resistance of 10.6 m/spl Omega/-mm/sup 2/ and 7.6 m/spl Omega/-mm/sup 2/ for a gate bias of 4.5 V and 10V respectively has been achieved, with a forward blocking voltage of over 30 V. This coupled with no reverse recovery charge makes the device very suitable for high frequency DC-DC converter applications.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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