研究隧道场效应管在20nm的特性，并探索利用隧道场效应管的时钟缓冲器和逆变器的性能

2017 IEEE International Conference on Electrical, Instrumentation and Communication Engineering (ICEICE) Pub Date : 2017-04-01 DOI:10.1109/ICEICE.2017.8191955

Suprovab Mandal, Sreemoyee Chatterjee, S. Ravi, H. Kittur

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摘要

根据摩尔定律，mosfet的基本测量值一直呈指数级下降。随着尺寸的减小，工作电压也随之减小，以保持恒定的电场。尽管如此，电压的变化速率与晶体管尺寸的变化速率并不相同。为了克服这一困难，隧道场效应管具有优异的性能提升前景。仿真结果表明，隧道场效应管的亚阈值摆幅比FinFET小2.57倍。采用隧道场效应管设计的时钟缓冲器和逆变器在功率和速度方面也表现出更好的性能。

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Study the characteristics of the tunnel FET at 20 nm and explore the performance of clock buffers and inverters using tunnel FET

As per Moore's Law, MOSFETs have encountered unfaltering, exponential scaling down of their basic measurements. As the size was decreased, working voltage was additionally lessened to keep up consistent electric fields. Be that as it may, the voltage did not scale at the same rate as transistor size. To overcome this difficulty, Tunnel FET has been emerged with superior performance enhancing promises. From the simulation, it has been found that the subthreshold swing of the Tunnel FET is 2.57 times smaller than the FinFET. Designed clock buffers and inverters with Tunnel FET also show better performance in power as well as speed.

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2017 IEEE International Conference on Electrical, Instrumentation and Communication Engineering (ICEICE)

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