{"title":"利用原位拉曼光谱技术高度控制微晶硅生长","authors":"T. Fink, S. Muthmann, M. Meier","doi":"10.1109/PVSC.2015.7356213","DOIUrl":null,"url":null,"abstract":"The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Highly controlled microcrystalline silicon growth using in-situ Raman spectroscopy\",\"authors\":\"T. Fink, S. Muthmann, M. Meier\",\"doi\":\"10.1109/PVSC.2015.7356213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7356213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7356213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly controlled microcrystalline silicon growth using in-situ Raman spectroscopy
The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.