Fang Chen, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Shanshan Tian, Y. Zou, Mei Li, Xiao-hui Ma
{"title":"S2Cl2溶液钝化锑化镓表面性能的研究","authors":"Fang Chen, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Shanshan Tian, Y. Zou, Mei Li, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316206","DOIUrl":null,"url":null,"abstract":"The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S<sub>2</sub>Cl<sub>2</sub>) and ammonium sulfide ((NH<sub>4</sub>)<sub>2</sub>S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S<sub>2</sub>Cl<sub>2</sub> comparing to (NH<sub>4</sub>)<sub>2</sub>S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S<sub>2</sub>Cl<sub>2</sub> passivation dramatically improves the stability against reoxidation in air compared with the (NH<sub>4</sub>)<sub>2</sub>S solution. We found that S<sub>2</sub>Cl<sub>2</sub> method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was higher than (NH<sub>4</sub>)<sub>2</sub>S-passivated sample, and stability of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was also more sustained. Overall, S<sub>2</sub>Cl<sub>2</sub> provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution\",\"authors\":\"Fang Chen, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Shanshan Tian, Y. Zou, Mei Li, Xiao-hui Ma\",\"doi\":\"10.1109/ICOOM.2012.6316206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S<sub>2</sub>Cl<sub>2</sub>) and ammonium sulfide ((NH<sub>4</sub>)<sub>2</sub>S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S<sub>2</sub>Cl<sub>2</sub> comparing to (NH<sub>4</sub>)<sub>2</sub>S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S<sub>2</sub>Cl<sub>2</sub> passivation dramatically improves the stability against reoxidation in air compared with the (NH<sub>4</sub>)<sub>2</sub>S solution. We found that S<sub>2</sub>Cl<sub>2</sub> method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was higher than (NH<sub>4</sub>)<sub>2</sub>S-passivated sample, and stability of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was also more sustained. Overall, S<sub>2</sub>Cl<sub>2</sub> provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution
The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S2Cl2) and ammonium sulfide ((NH4)2S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S2Cl2 comparing to (NH4)2S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S2Cl2 passivation dramatically improves the stability against reoxidation in air compared with the (NH4)2S solution. We found that S2Cl2 method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S2Cl2-passivated sample was higher than (NH4)2S-passivated sample, and stability of S2Cl2-passivated sample was also more sustained. Overall, S2Cl2 provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.
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