采用新型沟槽功率MOSFET双沟道结构，实现95%的DC-DC转换效率，降低体二极管损耗

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2015-05-10 DOI:10.1109/ISPSD.2015.7123390

O. Haberlen, M. Polzl, J. Schoiswohl, M. Rosch, S. Léomant, G. Nobauer, W. Rieger

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引用次数: 3

摘要

报道了一种新型的25V硅沟槽功率MOSFET，该MOSFET具有创纪录的Ron*Qg和Ron*Qoss优点系数，可用于快速高效的开关。具有两种不同栅极氧化物厚度的双通道结构可将主体二极管的传导损耗降低高达50%，并实现95%的DC-DC转换效率。

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95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

A novel 25V silicon trench power MOSFET optimized for fast and high efficient switching with record Ron*Qg and Ron*Qoss figure-of-merits is reported. A dual channel structure with two different gate oxide thicknesses allows reducing the body diode conduction losses by up to 50% and enables 95% DC-DC conversion efficiency.

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来源期刊

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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