未掺杂和锡掺杂ZnO薄膜上排列ZnO纳米棒的生长及其在染料敏化太阳能电池中的应用

I. Saurdi, N. Azhar, M. H. Mamat, A. Ishak, I. H. Affendi, A. Shafura, M. Rusop
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引用次数: 0

摘要

本文采用溶胶-凝胶自旋镀膜技术在玻璃和ITO衬底上制备了ZnO薄膜,并在ZnO薄膜中掺杂了2%的锡和未掺杂的锡。FESEM图像显示,2 at%锡掺杂ZnO的薄膜尺寸小于未掺杂ZnO。此外,还研究了2 at的电学性质和光学性质。%高于未掺杂ZnO薄膜。研究了锡掺杂ZnO薄膜对纳米棒生长的影响。纳米棒在2 at上的生长。与未掺杂ZnO薄膜相比,锡掺杂ZnO薄膜具有更高的比表面积和更小的纳米棒。两种纳米棒均已应用于染料敏化太阳能电池中,在2 at上生长的纳米棒表现出更好的光伏性能。%,与未掺杂ZnO薄膜上生长的纳米棒相比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of aligned ZnO nanorod on undoped and Tin-doped ZnO thin films and their application in dye-sensitized solar cell
In this work, the ZnO thin films were prepared by Sol gel Spin coating technique on glass and ITO substrates with undoped and doped 2 at% of Tin in ZnO film. The thin films particle size of 2 at% of Tin-Doped ZnO was smaller than undoped ZnO as shown in FESEM images. Furthermore, the electrical properties and optical properties of 2 at.% were higher than undoped ZnO films. The effect of Tin doped ZnO thin film on nanorod growth was investigated. The nanorod growth on 2 at.% Tin-doped ZnO exhibits higher surface area with much smaller nanorod as compared to undoped ZnO thin films. Both of nanorod had been applied in dye-sensitized solar cell and show better of photovoltaic properties for nanorod grown on 2 at.% as compared to nanorod grown on undoped ZnO film.
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