短沟道NMOS晶体管的DIBL系数

Proceedings of the Sixteenth National Radio Science Conference. NRSC'99 (IEEE Cat. No.99EX249) Pub Date : 1999-02-23 DOI:10.1109/NRSC.1999.760932

H. Ghitani

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引用次数: 17

摘要

研究了短沟道NMOS晶体管的漏极诱导势垒降低效应。研究的基础是闸门下损耗区泊松方程的二维解析解。导出了DIBL系数的封闭解析表达式，并研究了DIBL系数与温度的关系。数值计算结果与实验数据吻合较好。推导出的表达式可以有效地用于电路仿真程序。

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DIBL coefficient in short-channel NMOS transistors

A study of the drain induced barrier lowering (DIBL) effect in short-channel NMOS transistors is presented. The study is based on the two dimensional analytical solution of Poisson equation in the depletion region under the gate. A closed form analytical expression for the DIBL coefficient is derived and its temperature dependence is investigated. The numerical results obtained are in close agreement with the experimental data. The derived expression could be efficiently used in circuit simulation programs.

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Proceedings of the Sixteenth National Radio Science Conference. NRSC'99 (IEEE Cat. No.99EX249)

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