TC可靠性试验后SIP集成电路失效分析

Bardon Cui
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引用次数: 0

摘要

一个SIP (System-In-Package)芯片在240次循环温度测试后失效。电气试验结果表明故障是由于开路引起的。该SIP芯片采用三层结构。上下模组通过中间模组互连。仅根据ATE结果,无法确定故障细胞的位置。使用标准的分析技术,如三维x射线成像和共聚焦扫描声学显微镜(CSAM)不足以定位缺陷。通过激光解封探测分离出故障位置,确认开路在中间模内。平行磨削的使用是这个分析成功的关键因素。在此基础上,开发了一种新的SIP IC故障隔离工作流程。在该分析中,故障根本原因候选位置的逐渐减少是决定性的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Failure Analysis for SIP IC after TC reliability test
A System-In-Package (SIP) chip failed after 240 cycle temperature cycle test. Electrical test results suggested that the failure was due to an open circuit. . This SIP chip was built with a three layers structure. The upper and lower modules are interconnected through an interposer die. Based solely on the ATE results, the faulty cell could not be located. . Use of standard analysis techniques such as 3D X-ray imaging and Confocal Scanning Acoustic Microscopy (CSAM) was not enough to localize the defect. The fault location was isolated by laser decapsulation and probing, and the open circuit was confirmed to be in the interposer die. Use of parallel grinding was a key enabler to succeed in this analysis. From this, a new workflow was developed for fault isolation in SIP IC. The gradual reduction in candidate locations for the failure root cause was decisive in this analysis.
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