发布求助
文献互助 智能选刊 最新文献

基于灵敏度分析的量子门泄漏电流核模型

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871243
W. Schoenmaker, W. Magnus
{"title":"基于灵敏度分析的量子门泄漏电流核模型","authors":"W. Schoenmaker, W. Magnus","doi":"10.1109/SISPAD.2000.871243","DOIUrl":null,"url":null,"abstract":"A new formulation for gate-leakage currents due to quantum tunneling is presented. The resulting model has been inserted into software modules. The relative importance of various gate stack design parameters is investigated using DOE/RSM methods.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nuclear modeling of quantum gate leakage currents with sensitivity analysis\",\"authors\":\"W. Schoenmaker, W. Magnus\",\"doi\":\"10.1109/SISPAD.2000.871243\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new formulation for gate-leakage currents due to quantum tunneling is presented. The resulting model has been inserted into software modules. The relative importance of various gate stack design parameters is investigated using DOE/RSM methods.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871243\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了量子隧穿引起的栅漏电流的新公式。得到的模型被插入到软件模块中。采用DOE/RSM方法研究了各种栅极堆设计参数的相对重要性。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
分享
查看原文 本刊更多论文
Nuclear modeling of quantum gate leakage currents with sensitivity analysis
A new formulation for gate-leakage currents due to quantum tunneling is presented. The resulting model has been inserted into software modules. The relative importance of various gate stack design parameters is investigated using DOE/RSM methods.
求助全文
通过发布文献求助，成功后即可免费获取论文全文。 去求助
来源期刊
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信