用于亚阈值到I/O电压转换的单级静态电平移位器设计

Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08) Pub Date : 2008-08-11 DOI:10.1145/1393921.1393973

Yu-Shiang Lin, D. Sylvester

{"title":"用于亚阈值到I/O电压转换的单级静态电平移位器设计","authors":"Yu-Shiang Lin, D. Sylvester","doi":"10.1145/1393921.1393973","DOIUrl":null,"url":null,"abstract":"A static subthreshold to I/O voltage level shifter is proposed. The proposed circuit employs a diode-connected pull-up transistor stack and a feedback structure to alleviate the drive strength requirement on the pull-down transistors. The proposed level shifter achieves less than 6 FO4 inverter delay under process and temperature variation when converting the input from 300 mV to 2.5 V. Compared to a conventional DCVS design, the new design consumes 8 times less power and is 10% faster under room temperature.","PeriodicalId":166672,"journal":{"name":"Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)","volume":"269 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"Single stage static level shifter design for subthreshold to I/O voltage conversion\",\"authors\":\"Yu-Shiang Lin, D. Sylvester\",\"doi\":\"10.1145/1393921.1393973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A static subthreshold to I/O voltage level shifter is proposed. The proposed circuit employs a diode-connected pull-up transistor stack and a feedback structure to alleviate the drive strength requirement on the pull-down transistors. The proposed level shifter achieves less than 6 FO4 inverter delay under process and temperature variation when converting the input from 300 mV to 2.5 V. Compared to a conventional DCVS design, the new design consumes 8 times less power and is 10% faster under room temperature.\",\"PeriodicalId\":166672,\"journal\":{\"name\":\"Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)\",\"volume\":\"269 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1393921.1393973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1393921.1393973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 34

摘要

提出了一种用于I/O电压电平移位器的静态亚阈值。该电路采用二极管连接的上拉晶体管堆栈和反馈结构，以减轻对下拉晶体管的驱动强度要求。当输入从300 mV转换为2.5 V时，所提出的电平移位器在工艺和温度变化下实现了小于6 FO4的逆变器延迟。与传统的DCVS设计相比，新设计的功耗降低了8倍，在室温下的速度提高了10%。

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Single stage static level shifter design for subthreshold to I/O voltage conversion

A static subthreshold to I/O voltage level shifter is proposed. The proposed circuit employs a diode-connected pull-up transistor stack and a feedback structure to alleviate the drive strength requirement on the pull-down transistors. The proposed level shifter achieves less than 6 FO4 inverter delay under process and temperature variation when converting the input from 300 mV to 2.5 V. Compared to a conventional DCVS design, the new design consumes 8 times less power and is 10% faster under room temperature.

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来源期刊

Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)

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