硅-蓝宝石界面监测的表面光电压法

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939713

S. D. Fedotov, S. Timoshenkov, E. M. Sokolov, V. Statsenko, V. N. Stepchenkov

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引用次数: 1

摘要

采用表面光电压(SPV)法对CVD技术制备的蓝宝石硅片的硅-蓝宝石界面势垒进行了评价。该方法提供了对硅-蓝宝石界面质量的监测。找出了影响SPV信号的工艺参数。硅沉积温度对SPV信号有重要影响。由于SPV信号与x射线反射结果相关，因此SPV法可以作为SOS制造过程的监测方法。或许，SPV方法可以用来评价硅-蓝宝石界面的结构和电物理参数。确定了SOS装置性能随SPV信号的变化规律。结果表明，SPV信号在450 mV以上时，在SOS晶片上制备的mosfet性能较差;SPV信号在120 ~ 320 mV范围内时，在SOS晶片上制备的mosfet性能较好。

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Surface photovoltage method for silicon-sapphire interface monitoring

Surface photovoltage (SPV) method was used to evaluate the silicon-sapphire interface potential barrier of silicon on sapphire (SOS) wafers obtained by CVD technique. The method provides monitoring of silicon-sapphire interface quality. Fabrication process parameters which influence on SPV signal were found. Silicon deposition temperature has a great importance on SPV signal. It was found that SPV method can be used as monitoring method of SOS fabrication process, because SPV signals are correlated with X-ray reflectometry results. Probably, SPV method is allowed to evaluate the structural and electrophysical parameters of silicon-sapphire interface. SOS device performances as function of SPV signal were determined. It was concluded that MOSFETs fabricated on SOS wafers with SPV signal above 450 mV had poor performance and MOSFETs fabricated on SOS wafers with SPV signal in range 120–320 mV had good performance.

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来源期刊

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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