A performance analysis of Hetero- Dielectric Dual-Material-Gate silicon-on-insulator tunnel field effect transistors (HD-DMG SOI TFETs)

In this work, an investigation into the performance of Hetero-Dielectric Dual-Material-Gate SOI Tunnel FET (HD-DMG SOI TFET) by varying the work functions of both tunnel and auxiliary gates and analysing its influence on the transfer characteristics and the threshold voltage is done. With a suitable combination of work functions of both the tunnel and auxiliary gates, steeper Id-Vg variations and ION to IOFF ratio as high as 1.6×1011 has been achieved. It has also been found that using a high K dielectric near the tunnel junction and low K dielectric near the drain junction enhances the tunneling ON current. A comparison of electrical characteristics of HD-DMG-SOI TFET with that of Single Dielectric Dual Material Gate SOI Tunnel FET (SD-DMG SOI TFET) is also presented.