A. Roberts, J. Dreibelbis, G. Braceras, J. Gabric, L. Gilbert, R. Goodwin, E. Hedberg, T. Maffitt, L. Meuniar, D. Moran, P. Nguyen, D. Reed, D. Reismiller, R. Sasaki
{"title":"带有片上电源转换的256K SRAM","authors":"A. Roberts, J. Dreibelbis, G. Braceras, J. Gabric, L. Gilbert, R. Goodwin, E. Hedberg, T. Maffitt, L. Meuniar, D. Moran, P. Nguyen, D. Reed, D. Reismiller, R. Sasaki","doi":"10.1109/ISSCC.1987.1157185","DOIUrl":null,"url":null,"abstract":"A 47.2mm2SRAM utilizing an on-chip power supply conversion and allowing full synchronous operation at either 5.0V or 3.3V pin voltage without performance penalty will be discussed. The chip with a six-device cell size of 109μm2has been built in a 0.7μm CMOS DRAM technology with silicides and double level metal. Access times is 30ns, with less than 100mA active current consumption.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"63 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 256K SRAM with on-chip power supply conversion\",\"authors\":\"A. Roberts, J. Dreibelbis, G. Braceras, J. Gabric, L. Gilbert, R. Goodwin, E. Hedberg, T. Maffitt, L. Meuniar, D. Moran, P. Nguyen, D. Reed, D. Reismiller, R. Sasaki\",\"doi\":\"10.1109/ISSCC.1987.1157185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 47.2mm2SRAM utilizing an on-chip power supply conversion and allowing full synchronous operation at either 5.0V or 3.3V pin voltage without performance penalty will be discussed. The chip with a six-device cell size of 109μm2has been built in a 0.7μm CMOS DRAM technology with silicides and double level metal. Access times is 30ns, with less than 100mA active current consumption.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"63 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157185\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 47.2mm2SRAM utilizing an on-chip power supply conversion and allowing full synchronous operation at either 5.0V or 3.3V pin voltage without performance penalty will be discussed. The chip with a six-device cell size of 109μm2has been built in a 0.7μm CMOS DRAM technology with silicides and double level metal. Access times is 30ns, with less than 100mA active current consumption.
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