增强增益双极场效应晶体管(BMFET)的开关性能

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991095

G. Busatto, G. Ferla, P. Fallica, S. Musumeci

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引用次数: 2

摘要

介绍了通过改进栅极输运参数获得的维持电压为1600 V、6安培电流增益为5的新一代常关断BMFET的开关性能，并与具有相同晶片尺寸和维持电压的双极结晶体管进行了比较。关断时间低至58秒在这些设备上测量。研究了开关瞬态过程中涉及的现象，目的是研究栅极掺杂的变化对开关时间的影响。

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Switching performances of enhanced gain bipolar mode field effect transistor (BMFET)

The switching performances of a new generation of normally-off BMFET with a sustaining voltage of 1600 V and current gain 5 at 6 Amp, obtained by improving gate transport parameters, are presented and compared to those of a bipolar junction transistor with same die size and sustaining voltage. Turn-off times as low as 58 ns are measured on these d,evices. The phenomena involved during the switching transient are investigated with the objective to study the effects of the variation of gate doping on the switching times.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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