Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai
{"title":"生物质EUV非car型抗蚀剂用于高na EUV光刻的潜力","authors":"Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai","doi":"10.1117/12.2657938","DOIUrl":null,"url":null,"abstract":"A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Potential of biomass EUV non-CAR type resist for high-NA EUV lithography\",\"authors\":\"Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai\",\"doi\":\"10.1117/12.2657938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.\",\"PeriodicalId\":212235,\"journal\":{\"name\":\"Advanced Lithography\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2657938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2657938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Potential of biomass EUV non-CAR type resist for high-NA EUV lithography
A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.