生物质EUV非car型抗蚀剂用于高na EUV光刻的潜力

Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai
{"title":"生物质EUV非car型抗蚀剂用于高na EUV光刻的潜力","authors":"Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai","doi":"10.1117/12.2657938","DOIUrl":null,"url":null,"abstract":"A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Potential of biomass EUV non-CAR type resist for high-NA EUV lithography\",\"authors\":\"Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, M. Asai\",\"doi\":\"10.1117/12.2657938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.\",\"PeriodicalId\":212235,\"journal\":{\"name\":\"Advanced Lithography\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2657938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2657938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种生物质EUV非car型抗蚀剂作为减少二氧化碳排放的可持续材料。结果表明,采用生物质EUV阻剂的1.5 nm节点器件需要HP 8 nm的L/S模式形成。提出了提高生物质EUV光刻性能的两种途径:光刻胶结构改进和光刻工艺改进。通过改进抗蚀剂结构,提高了图案质量。此外,光刻工艺[预曝光金属渗透(PreMi)工艺和新型光刻工艺]提高了生物质EUV抗蚀剂的灵敏度。这证明生物质极紫外光刻胶可用于8nm的高na极紫外光刻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Potential of biomass EUV non-CAR type resist for high-NA EUV lithography
A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.
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