准束缚态寿命对共振隧道二极管速度的影响

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.wd4

E. Brown, C. Parker, T. Sollner, C.I. Huang, C. E. Stutz

{"title":"准束缚态寿命对共振隧道二极管速度的影响","authors":"E. Brown, C. Parker, T. Sollner, C.I. Huang, C. E. Stutz","doi":"10.1364/qwoe.1989.wd4","DOIUrl":null,"url":null,"abstract":"Recent optical experiments have directly measured the quasibound-state lifetime in resonant-tunneling structures [1]. The results indicate that this lifetime is close to that predicted by the coherent model of the process. The present paper deals with the effect of this lifetime on the electrical response of the double-barrier diode at high frequencies.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Effect of Quasibound State Lifetime on the Speed of Resonant-Tunneling Diodes\",\"authors\":\"E. Brown, C. Parker, T. Sollner, C.I. Huang, C. E. Stutz\",\"doi\":\"10.1364/qwoe.1989.wd4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent optical experiments have directly measured the quasibound-state lifetime in resonant-tunneling structures [1]. The results indicate that this lifetime is close to that predicted by the coherent model of the process. The present paper deals with the effect of this lifetime on the electrical response of the double-barrier diode at high frequencies.\",\"PeriodicalId\":205579,\"journal\":{\"name\":\"Quantum Wells for Optics and Optoelectronics\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Wells for Optics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/qwoe.1989.wd4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.wd4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

最近的光学实验直接测量了共振隧道结构中的准束缚态寿命[1]。结果表明，该寿命与过程的相干模型预测的寿命接近。本文讨论了该寿命对双势垒二极管高频电响应的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Effect of Quasibound State Lifetime on the Speed of Resonant-Tunneling Diodes

Recent optical experiments have directly measured the quasibound-state lifetime in resonant-tunneling structures [1]. The results indicate that this lifetime is close to that predicted by the coherent model of the process. The present paper deals with the effect of this lifetime on the electrical response of the double-barrier diode at high frequencies.

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Quantum Wells for Optics and Optoelectronics

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