用于超低功耗空间应用的抗辐射存储单元

Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo
{"title":"用于超低功耗空间应用的抗辐射存储单元","authors":"Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo","doi":"10.1109/IPFA47161.2019.8984807","DOIUrl":null,"url":null,"abstract":"In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Radiation-Hardened Memory Cell for Ultralow Power Space Applications\",\"authors\":\"Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo\",\"doi\":\"10.1109/IPFA47161.2019.8984807\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"137 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984807\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种适用于低电压和超低功耗空间应用的新型辐射强化存储单元,命名为RHDMC。通过特殊的布局设计,RHDMC既能承受单次倾覆,又能减轻单次多次倾覆。与最近发表的用于低压工作的低功耗存储单元相比,仿真结果(而不是实验数据)表明,在以129.5%的面积开销为代价的情况下,所提出的存储单元可以在SEU发生时提供更低的功耗。为了进行比较,我们还研究了我们提出的存储器和LA13T之间的访问时间和功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation-Hardened Memory Cell for Ultralow Power Space Applications
In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信