{"title":"一种计算闪存冗余覆盖率的方法","authors":"S. Matarrese, L. Fasoli","doi":"10.1109/MTDT.2001.945226","DOIUrl":null,"url":null,"abstract":"Presents a method to calculate the redundancy coverage for FLASH memory. The method can be used to compare different redundancy architectures and gives the probability of repairing a certain number of random failures. After a brief introduction, the hypothesis and the method are presented. Some illustrative examples are provided.","PeriodicalId":159230,"journal":{"name":"Proceedings 2001 IEEE International Workshop on Memory Technology, Design and Testing","volume":"334 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A method to calculate redundancy coverage for FLASH memories\",\"authors\":\"S. Matarrese, L. Fasoli\",\"doi\":\"10.1109/MTDT.2001.945226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presents a method to calculate the redundancy coverage for FLASH memory. The method can be used to compare different redundancy architectures and gives the probability of repairing a certain number of random failures. After a brief introduction, the hypothesis and the method are presented. Some illustrative examples are provided.\",\"PeriodicalId\":159230,\"journal\":{\"name\":\"Proceedings 2001 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"334 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2001 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2001.945226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2001 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2001.945226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A method to calculate redundancy coverage for FLASH memories
Presents a method to calculate the redundancy coverage for FLASH memory. The method can be used to compare different redundancy architectures and gives the probability of repairing a certain number of random failures. After a brief introduction, the hypothesis and the method are presented. Some illustrative examples are provided.