片上线阶边效应的精确表征

T. Winkel, L. S. Dutta, H. Grabinski
{"title":"片上线阶边效应的精确表征","authors":"T. Winkel, L. S. Dutta, H. Grabinski","doi":"10.1109/ARFTG.2000.327445","DOIUrl":null,"url":null,"abstract":"The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.","PeriodicalId":166771,"journal":{"name":"56th ARFTG Conference Digest","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Accurate Characterization of Fringing Effects at On-Chip Line Steps\",\"authors\":\"T. Winkel, L. S. Dutta, H. Grabinski\",\"doi\":\"10.1109/ARFTG.2000.327445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.\",\"PeriodicalId\":166771,\"journal\":{\"name\":\"56th ARFTG Conference Digest\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"56th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2000.327445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"56th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2000.327445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

互连步骤处的电散射场可以通过宽线的虚拟附加线长来考虑[1]。当表征带有不连续的片上和片外互连时,必须考虑到这种影响。理论将被讨论和测量结果将被提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate Characterization of Fringing Effects at On-Chip Line Steps
The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信