{"title":"片上线阶边效应的精确表征","authors":"T. Winkel, L. S. Dutta, H. Grabinski","doi":"10.1109/ARFTG.2000.327445","DOIUrl":null,"url":null,"abstract":"The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.","PeriodicalId":166771,"journal":{"name":"56th ARFTG Conference Digest","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Accurate Characterization of Fringing Effects at On-Chip Line Steps\",\"authors\":\"T. Winkel, L. S. Dutta, H. Grabinski\",\"doi\":\"10.1109/ARFTG.2000.327445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.\",\"PeriodicalId\":166771,\"journal\":{\"name\":\"56th ARFTG Conference Digest\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"56th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2000.327445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"56th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2000.327445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurate Characterization of Fringing Effects at On-Chip Line Steps
The electrical scattering field at steps on interconnects can be taken into account by a virtual additional line length of the wider line [1]. This effect must be taken into account when characterizing on and off-chip interconnects with discontinuities. The theory will be discussed and measurement results will be presented.