{"title":"电路边际性相关故障的内置测试和表征方法","authors":"A. Sanyal, S. Kundu","doi":"10.1109/ISQED.2008.51","DOIUrl":null,"url":null,"abstract":"With the advent of ultra deep-submicron (UDSM) regime of integrated circuits, the issues with circuit marginality related transient failures are on the rise. An example of such failures is the thermal hotspot-induced ones, which are common when a particular functional unit experiences high switching activity for a considerable duration. In this paper, we propose an on-line hotspot-induced transient failure testing scheme using the built-in self-test (BlST)-based approach which accurately distinguishes such a transient failure from a hard fail and greatly reduces the test cost by dissociating a tester from the test process. We apply the principle of Fmax testing based on frequency shmoo to obtain the maximum safe operating frequency for individual functional units in a chip. We also propose a DFT scheme to characterize the impact of a \"hot\" unit on its neighborhood and also the influence of a \"hot\" neighborhood on an otherwise \"cold\" unit in the reverse way. Thus the proposed architecture extends the capability of the conventional BIST to test a certain class of circuit marginality related transient failures with a very low hardware overhead.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Built-in Test and Characterization Method for Circuit Marginality Related Failures\",\"authors\":\"A. Sanyal, S. Kundu\",\"doi\":\"10.1109/ISQED.2008.51\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the advent of ultra deep-submicron (UDSM) regime of integrated circuits, the issues with circuit marginality related transient failures are on the rise. An example of such failures is the thermal hotspot-induced ones, which are common when a particular functional unit experiences high switching activity for a considerable duration. In this paper, we propose an on-line hotspot-induced transient failure testing scheme using the built-in self-test (BlST)-based approach which accurately distinguishes such a transient failure from a hard fail and greatly reduces the test cost by dissociating a tester from the test process. We apply the principle of Fmax testing based on frequency shmoo to obtain the maximum safe operating frequency for individual functional units in a chip. We also propose a DFT scheme to characterize the impact of a \\\"hot\\\" unit on its neighborhood and also the influence of a \\\"hot\\\" neighborhood on an otherwise \\\"cold\\\" unit in the reverse way. Thus the proposed architecture extends the capability of the conventional BIST to test a certain class of circuit marginality related transient failures with a very low hardware overhead.\",\"PeriodicalId\":243121,\"journal\":{\"name\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2008.51\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.51","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Built-in Test and Characterization Method for Circuit Marginality Related Failures
With the advent of ultra deep-submicron (UDSM) regime of integrated circuits, the issues with circuit marginality related transient failures are on the rise. An example of such failures is the thermal hotspot-induced ones, which are common when a particular functional unit experiences high switching activity for a considerable duration. In this paper, we propose an on-line hotspot-induced transient failure testing scheme using the built-in self-test (BlST)-based approach which accurately distinguishes such a transient failure from a hard fail and greatly reduces the test cost by dissociating a tester from the test process. We apply the principle of Fmax testing based on frequency shmoo to obtain the maximum safe operating frequency for individual functional units in a chip. We also propose a DFT scheme to characterize the impact of a "hot" unit on its neighborhood and also the influence of a "hot" neighborhood on an otherwise "cold" unit in the reverse way. Thus the proposed architecture extends the capability of the conventional BIST to test a certain class of circuit marginality related transient failures with a very low hardware overhead.