具有4 ghz中频带宽的53 - 64 ghz SiGe上转换混频器

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422955

M. Ko, H. Rucker, W. Choi

{"title":"具有4 ghz中频带宽的53 - 64 ghz SiGe上转换混频器","authors":"M. Ko, H. Rucker, W. Choi","doi":"10.1109/SMIC.2010.5422955","DOIUrl":null,"url":null,"abstract":"A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth\",\"authors\":\"M. Ko, H. Rucker, W. Choi\",\"doi\":\"10.1109/SMIC.2010.5422955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.\",\"PeriodicalId\":404957,\"journal\":{\"name\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2010.5422955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

为57-64 ghz免许可频段应用实现了吉尔伯特单元直接上转换混频器。具有片上堆叠电感和LO, RF平衡的混频器采用0.25-¿m SiGe:C BiCMOS技术制造。该混频器在53 ~ 64 GHz频率范围内，上边带和下边带的转换增益分别为4±1.5 dB和5±1 dB。低电平到射频隔离度高于30db。混频器的中频带宽为4ghz，输出参考的1db压缩点为-9.5 dBm。芯片面积为0.46 mm × 0.46 mm，功耗为10ma，电源电压为2.5 V。

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A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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