短通道nMOSFET中微波噪声源内部分布的仿真

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869851

M. Obrecht, T. Manku, M. Elmasry

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引用次数: 0

摘要

从噪声源密度和电流密度等器件内部特性的角度讨论了短沟道mosfet中的高频过量噪声。结果表明，在短沟道mosfet中，垂直于界面的电流密度分量是高频(扩散)噪声的主要来源。

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Simulation of internal distribution of microwave noise sources in a short-channel nMOSFET

High frequency excess noise in short-channel MOSFETs is discussed from the point of view of internal device characteristics, such as noise source density and current densities. It is demonstrated that the current density component perpendicular to the interface produces a major portion of the high frequency (diffusion) noise in short-channel MOSFETs.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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