一种直接提取有效频率高达50 GHz的射频mosfet衬底电阻分量的方法

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398211

Seyoung Kim, Jeonghu Han, Hyungcheol Shin

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引用次数: 7

摘要

提出了一种直接提取射频mosfet衬底电阻分量的方法。该方法可准确预测mosfet在50 GHz范围内的输出特性，而单衬底电阻模型在15 GHz范围内有效。

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A direct method to extract the substrate resistance components of RF MOSFETs valid up to 50 GHz

A direct method to extract the substrate resistance components of RF MOSFETs has been proposed. The method predicts the output characteristics of MOSFETs accurately up to 50 GHz, while the model with a single substrate resistance was valid up to 15 GHz.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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