高k/金属栅极nMOSFET中减小Vt波动的光晕轮廓工程

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604546

W.-Y. Chen, T. Yu, T. Ohtou, Y. Sheu, Jeff Wu, Cheewee Liu

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引用次数: 1

摘要

本文提出了一种新的晕形工程来抑制离散随机掺杂波动(RDF)引起的阈值电压变化(σVt)。利用内部的三维原子数值模拟工具对HK/MG工艺中RDF引起的nmosfet σVt进行了评估。结果表明，通过优化光晕植入体的旋转角度和倾斜角度，可以有效地抑制10%的σVt。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Halo profile engineering to reduce Vt fluctuation in high-k/metal-gate nMOSFET

In this work, new halo profile engineering is proposed to suppress the threshold voltage variation (σVt) caused by discrete random dopant fluctuation (RDF). An in-house 3D atomistic numerical simulation tool is utilized to assess nMOSFETs σVt caused by RDF for a HK/MG process. The results show that σVt can be effectively suppressed by 10% by optimizing rotation and tilt angles of the halo implant.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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