C. Álvarez, M. L. Aranda, A. Torres-Jácome, W. C. Arriaga
{"title":"CMOS-MEMS集成工艺开发中残余应力监测的测试结构","authors":"C. Álvarez, M. L. Aranda, A. Torres-Jácome, W. C. Arriaga","doi":"10.1109/SMACD.2016.7520745","DOIUrl":null,"url":null,"abstract":"The design of a set of test structures required to monitoring the residual stress and residual stress gradient in the development of a fabrication process that merges electronic and mechanical devices is presented. The microstructures designed have the advantage to be functional with different structural materials like polysilicon, aluminum and titanium. Beam theories have been used to obtain a wide range strain monitoring ranging from 5 MPa until more than 50 MPa. The designed test structures were validated by a finite element analysis.","PeriodicalId":306349,"journal":{"name":"International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Test structures for residual stress monitoring in the integrated CMOS-MEMS process development\",\"authors\":\"C. Álvarez, M. L. Aranda, A. Torres-Jácome, W. C. Arriaga\",\"doi\":\"10.1109/SMACD.2016.7520745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of a set of test structures required to monitoring the residual stress and residual stress gradient in the development of a fabrication process that merges electronic and mechanical devices is presented. The microstructures designed have the advantage to be functional with different structural materials like polysilicon, aluminum and titanium. Beam theories have been used to obtain a wide range strain monitoring ranging from 5 MPa until more than 50 MPa. The designed test structures were validated by a finite element analysis.\",\"PeriodicalId\":306349,\"journal\":{\"name\":\"International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMACD.2016.7520745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD.2016.7520745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Test structures for residual stress monitoring in the integrated CMOS-MEMS process development
The design of a set of test structures required to monitoring the residual stress and residual stress gradient in the development of a fabrication process that merges electronic and mechanical devices is presented. The microstructures designed have the advantage to be functional with different structural materials like polysilicon, aluminum and titanium. Beam theories have been used to obtain a wide range strain monitoring ranging from 5 MPa until more than 50 MPa. The designed test structures were validated by a finite element analysis.