Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors

State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (420degC) while conserving extremely high quality materials. A self-aligned transistor with an emitter area of 5times5 mum2 demonstrated a low offset voltage of 150 mV and high current gain of 90. An excellent agreement with the measured data was achieved using physical modelling packages developed by SILVACO.