{"title":"电压瞬态测量及功率射频MOSFET热时间常数的提取","authors":"C. Baylis, L. Dunleavy","doi":"10.1109/ARFTG.2007.8376176","DOIUrl":null,"url":null,"abstract":"Thermal time constants have been measured for a high-power Si VDMOSFET using a transient setup measuring voltage across a small resistor placed in series with the drain of the device. A voltage step is applied to the gate of the transistor to step the device from threshold to possessing a significant DC power dissipation. Exponential models are fit to the transient results. The traditional one-pole fit is compared to a two-pole fit. It is discovered that the two-pole fit provides a slightly better prediction of the transient.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Voltage transient measurement and extraction of power RF MOSFET thermal time constants\",\"authors\":\"C. Baylis, L. Dunleavy\",\"doi\":\"10.1109/ARFTG.2007.8376176\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal time constants have been measured for a high-power Si VDMOSFET using a transient setup measuring voltage across a small resistor placed in series with the drain of the device. A voltage step is applied to the gate of the transistor to step the device from threshold to possessing a significant DC power dissipation. Exponential models are fit to the transient results. The traditional one-pole fit is compared to a two-pole fit. It is discovered that the two-pole fit provides a slightly better prediction of the transient.\",\"PeriodicalId\":199632,\"journal\":{\"name\":\"2007 70th ARFTG Microwave Measurement Conference (ARFTG)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 70th ARFTG Microwave Measurement Conference (ARFTG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2007.8376176\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2007.8376176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Voltage transient measurement and extraction of power RF MOSFET thermal time constants
Thermal time constants have been measured for a high-power Si VDMOSFET using a transient setup measuring voltage across a small resistor placed in series with the drain of the device. A voltage step is applied to the gate of the transistor to step the device from threshold to possessing a significant DC power dissipation. Exponential models are fit to the transient results. The traditional one-pole fit is compared to a two-pole fit. It is discovered that the two-pole fit provides a slightly better prediction of the transient.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
