三维集成电路中硅通孔直流电流拥挤及其对电源完整性的影响分析

Xin Zhao, M. Scheuermann, S. Lim
{"title":"三维集成电路中硅通孔直流电流拥挤及其对电源完整性的影响分析","authors":"Xin Zhao, M. Scheuermann, S. Lim","doi":"10.1145/2228360.2228391","DOIUrl":null,"url":null,"abstract":"Due to the large geometry of through-silicon-vias (TSVs) and their connections to the power grid, significant current crowding can occur in 3D ICs. Prior works model TSVs and power wire segments as single resistors, which cannot capture the detailed current distribution and may miss trouble spots associated with current crowding. This paper studies DC current crowding and its impact on 3D power integrity. First, we explore the current density distribution within a TSV and its power wire connections. Second, we build and validate effective TSV models for current density distributions. Finally, these models are integrated with global power wires for detailed chip-scale power grid analysis.","PeriodicalId":263599,"journal":{"name":"DAC Design Automation Conference 2012","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Analysis of DC current crowding in through-silicon-vias and its impact on power integrity in 3D ICs\",\"authors\":\"Xin Zhao, M. Scheuermann, S. Lim\",\"doi\":\"10.1145/2228360.2228391\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the large geometry of through-silicon-vias (TSVs) and their connections to the power grid, significant current crowding can occur in 3D ICs. Prior works model TSVs and power wire segments as single resistors, which cannot capture the detailed current distribution and may miss trouble spots associated with current crowding. This paper studies DC current crowding and its impact on 3D power integrity. First, we explore the current density distribution within a TSV and its power wire connections. Second, we build and validate effective TSV models for current density distributions. Finally, these models are integrated with global power wires for detailed chip-scale power grid analysis.\",\"PeriodicalId\":263599,\"journal\":{\"name\":\"DAC Design Automation Conference 2012\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DAC Design Automation Conference 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2228360.2228391\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAC Design Automation Conference 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2228360.2228391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

由于硅通孔(tsv)的大几何形状及其与电网的连接,在3D集成电路中可能会出现明显的电流拥挤。先前的工作将tsv和电源线段建模为单个电阻,无法捕获详细的电流分布,并且可能错过与电流拥挤相关的故障点。本文研究了直流电流拥挤及其对三维电源完整性的影响。首先,我们探讨了TSV内的电流密度分布及其电源线连接。其次,我们建立并验证了电流密度分布的有效TSV模型。最后,将这些模型与全球电网集成,进行详细的芯片级电网分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of DC current crowding in through-silicon-vias and its impact on power integrity in 3D ICs
Due to the large geometry of through-silicon-vias (TSVs) and their connections to the power grid, significant current crowding can occur in 3D ICs. Prior works model TSVs and power wire segments as single resistors, which cannot capture the detailed current distribution and may miss trouble spots associated with current crowding. This paper studies DC current crowding and its impact on 3D power integrity. First, we explore the current density distribution within a TSV and its power wire connections. Second, we build and validate effective TSV models for current density distributions. Finally, these models are integrated with global power wires for detailed chip-scale power grid analysis.
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