集成限流器和商用栅极驱动器的GaN功率器件短路保护

D. Bisi, Long Nguyen, P. Zuk, Ashish Gokhale, Keith Coffey, Te-Chuan Liu, B. Cruse, T. Hosoda, M. Kamiyama, P. Parikh, U. Mishra
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引用次数: 3

摘要

演示了一种成功的GaN功率器件与商用栅极驱动器配对的短路保护技术。GaN功率器件具有集成的短路限流器(SCCL),以实现足够长的短路耐受时间(SCWT)。SCWT从0.3µs调整到2µs(显着增加7倍),导通电阻的损失相对较小。栅极驱动器具有去饱和检测(DESAT)和软关断电路,可实现800 ns的快速保护响应,具有高于100 V/ns的高抗扰度。具有SCCL的GaN功率器件和具有快速DESAT和高抗噪性的商用栅极驱动器的组合允许GaN功率电子器件的短路保护和故障安全操作,从而在电机驱动应用中具有额外的稳健性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver
A successful short-circuit protection technology for GaN power devices paired with a commercial gate driver is demonstrated. The GaN power devices have an integrated Short-Circuit Current Limiter (SCCL) to achieve a sufficiently long short-circuit withstanding time (SCWT). The SCWT is tuned from 0.3 µs to 2 µs (a remarkable 7x increase) with a relatively small penalty in on-resistance. The gate-driver has desaturation detection (DESAT) and soft shutdown circuitry to achieve a fast protection response of 800 ns with high noise immunity greater than 100 V/ns. The combination of GaN power devices with SCCL and a commercial gate driver with fast DESAT and high noise immunity allows short-circuit protection and fail-safe operation of GaN power electronics for additional robustness in motor drive applications.
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