设计-在先进技术的过度驱动应用的可靠性

Jae-Gyung Ahn, Ping-Chin Yeh, Jane Sowards, Nick Lo, Jonathan Chang
{"title":"设计-在先进技术的过度驱动应用的可靠性","authors":"Jae-Gyung Ahn, Ping-Chin Yeh, Jane Sowards, Nick Lo, Jonathan Chang","doi":"10.1109/IIRW.2010.5706513","DOIUrl":null,"url":null,"abstract":"We present the FEOL reliability checking flow in advanced technology especially with over drive applications. We check gate bias values obtained from SPICE transient simulation against the maximum allowed value, Vg_max, to make sure robust gate dielectric reliability. We set up HSPICE MOSRA simulation procedure to let designers check the impact of BTI and HCI to each MOSFET device and the circuit performance at End-of-Lifetime (EOL). From HCI degradation analysis from HSPICE MOSRA, we obtained a good correlation between HCI damage and slew rate and conditions in which HCI degradation is negligible. We discuss on the selection of the stress conditions and monitor conditions to be checked. We applied HSPICE MOSRA to several over drive applications and were able to successfully justify them with careful modeling for HCI and NCHC in addition to BTI.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design-in reliability for over drive applications in advanced technology\",\"authors\":\"Jae-Gyung Ahn, Ping-Chin Yeh, Jane Sowards, Nick Lo, Jonathan Chang\",\"doi\":\"10.1109/IIRW.2010.5706513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the FEOL reliability checking flow in advanced technology especially with over drive applications. We check gate bias values obtained from SPICE transient simulation against the maximum allowed value, Vg_max, to make sure robust gate dielectric reliability. We set up HSPICE MOSRA simulation procedure to let designers check the impact of BTI and HCI to each MOSFET device and the circuit performance at End-of-Lifetime (EOL). From HCI degradation analysis from HSPICE MOSRA, we obtained a good correlation between HCI damage and slew rate and conditions in which HCI degradation is negligible. We discuss on the selection of the stress conditions and monitor conditions to be checked. We applied HSPICE MOSRA to several over drive applications and were able to successfully justify them with careful modeling for HCI and NCHC in addition to BTI.\",\"PeriodicalId\":332664,\"journal\":{\"name\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2010.5706513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了先进技术特别是超驱动应用下的FEOL可靠性检测流程。我们将SPICE瞬态仿真得到的栅极偏置值与最大允许值Vg_max进行比较,以确保栅极介电可靠性。我们建立了HSPICE MOSRA仿真程序,让设计人员检查BTI和HCI对每个MOSFET器件的影响以及寿命终止(EOL)时的电路性能。从HSPICE MOSRA的HCI降解分析中,我们获得了HCI损伤与回转率以及HCI降解可忽略的条件之间的良好相关性。讨论了应力条件的选择和监测条件的校核。我们将HSPICE MOSRA应用于多个超驱动应用程序,并能够通过对HCI和NCHC以及BTI进行仔细建模来成功地证明它们的合理性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design-in reliability for over drive applications in advanced technology
We present the FEOL reliability checking flow in advanced technology especially with over drive applications. We check gate bias values obtained from SPICE transient simulation against the maximum allowed value, Vg_max, to make sure robust gate dielectric reliability. We set up HSPICE MOSRA simulation procedure to let designers check the impact of BTI and HCI to each MOSFET device and the circuit performance at End-of-Lifetime (EOL). From HCI degradation analysis from HSPICE MOSRA, we obtained a good correlation between HCI damage and slew rate and conditions in which HCI degradation is negligible. We discuss on the selection of the stress conditions and monitor conditions to be checked. We applied HSPICE MOSRA to several over drive applications and were able to successfully justify them with careful modeling for HCI and NCHC in addition to BTI.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信