{"title":"v波段单片InP HEMT下变频器[卫星通信用]","authors":"K. Chang, H. Wang, R. Lai, D. Lo, J. Berenz","doi":"10.1109/GAAS.1993.394467","DOIUrl":null,"url":null,"abstract":"The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A V-band monolithic InP HEMT down converter [for satellite communication]\",\"authors\":\"K. Chang, H. Wang, R. Lai, D. Lo, J. Berenz\",\"doi\":\"10.1109/GAAS.1993.394467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A V-band monolithic InP HEMT down converter [for satellite communication]
The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<>
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