一种降低dram刷新功率的混合ECC和冗余技术

Yun-Chao You, Chih-Sheng Hou, Li-Jung Chang, Jin-Fu Li, Chih-Yen Lo, D. Kwai, Yung-Fa Chou, Cheng-Wen Wu
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引用次数: 9

摘要

动态随机存取存储器(DRAM)是手持设备的关键部件之一。即使设备由于刷新要求而处于待机模式,它通常也会消耗设备的很大一部分能量。本文提出了一种混合纠错码(ECC)和冗余(HEAR)技术来降低待机状态下dram的刷新功率。该电路由Bose-Chaudhuri-Hocquenghem (BCH)模块和EBR (error-bit repair)模块组成,提高了纠错能力,最大限度地减少了ECC技术带来的不利影响,从而有效延长了刷新周期,大大降低了刷新功耗。分析结果表明,对于待机状态的2Gb DDR3 DRAM,所提出的HEAR方案可以实现40~70%的节能。该方案的奇偶校验数据和ECC电路的面积成本分别仅为纯ECC的63%和53%左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A hybrid ECC and redundancy technique for reducing refresh power of DRAMs
Dynamic random access memory (DRAM) is one key component in handheld devices. It typically consumes significant portion of the energy of the device even if the device is in standby mode due to the refresh requirement. This paper proposes a hybrid error-correcting code (ECC) and redundancy (HEAR) technique to reduce the refresh power of DRAMs in standby mode. The HEAR circuit consists of a Bose-Chaudhuri-Hocquenghem (BCH) module and an error-bit repair (EBR) module to raise the error correction capability and minimize the adverse effects caused by the ECC technique such that the refresh period can be effectively prolonged and considerable refresh power reduction can be achieved. Analysis results show that the proposed HEAR scheme can achieve 40~70% of energy saving for a 2Gb DDR3 DRAM in standby mode. The area cost of parity data and ECC circuit of HEAR scheme is only about 63 % and 53 % of that of the ECC-only, respectively.
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