分子束外延生长的掺氧硅中铒的1.5 μm室温发光

1994 Conference on Lasers and Electro-Optics Europe Pub Date : 1900-01-01 DOI:10.1364/cleo_europe.1994.cthp4

R. Serna, M. Lohmeier, E. Vlieg, A. Polman

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引用次数: 0

摘要

硅的间接银隙阻碍了电激发下的有效发光。这使得硅在光电应用中不切实际。通过在Si中掺杂铒，可以在液氮温度下获得1.5 μm的Er intra-4f壳层发射特性较早的报道表明，低浓度的氧可以增强发光强度

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1.5 μm Room-temperature luminescence from erbium in oxygen-doped silicon grown by molecular beam epitaxy

The indirect bank gap of Si precludes efficient light emission under electrical excitation. This makes Si impractical for optoelectronic applications. By doping the Si with erbium, characteristic Er intra-4f shell emission at 1.5 μm can be obtained at liquid nitrogen temperate.1 Earlier reports have shown that the luminescence intensity can be enhanced by the presence of low concentrations of oxygen.2,3,4

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1994 Conference on Lasers and Electro-Optics Europe

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