LTE发射机系统设计与性能分析

2019 International Conference on Advanced Systems and Emergent Technologies (IC_ASET) Pub Date : 2019-03-01 DOI:10.1109/ASET.2019.8871045

H. Rezgui, F. Rouissi, A. Ghazel

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引用次数: 0

摘要

本文分析了LTE发射机的缺陷及其对调制精度和输出频谱发射的影响。详细介绍了基于LTE发射机电子器件规格的误差矢量幅值(EVM)、相邻信道泄漏比(ACLR)及其解析表达式。利用这些预测方程，给出了满足LTE标准要求的完整的LTE发射机尺寸。基于AD9361 SDR板和Analog Devices的GaN功率放大器(PA)的实验装置验证了分析结果。

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LTE Transmitter System Design and Performances Analysis

This paper analyzes the LTE transmitter imperfections and their effects on modulation accuracy and output spectrum emissions. The Error Vector Magnitude (EVM), Adjacent Channel Leakage Ratio (ACLR) and their analytical expressions based on the specifications of the electronics components of the LTE transmitter are detailed. Using these predictor equations, a complete LTE transmitter dimensioning meeting LTE standard requirements is provided. The analytical results are also validated by an experimental set up based on AD9361 SDR board and GaN Power Amplifier (PA) from Analog Devices.

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2019 International Conference on Advanced Systems and Emergent Technologies (IC_ASET)

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