介质击穿对TMR传感器的影响及焦耳加热的作用

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592529

I. Eric, T. Iben

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引用次数: 2

摘要

对于tmr的电压(V)应力，介质击穿时间的对数在(H-γZaV/tB)/(kBT)范围内呈线性关系，其中H、γ、Z、a、tB和kB分别为活化能、参数、电荷、隧道势垒晶格常数和厚度以及玻尔兹曼常数。T是隧道势垒的环境温度加上焦耳加热温度。

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Dielectric breakdown of TMR sensors and the role of Joule heating

For voltage (V) stress of TMRs, the log of the dielectric breakdown time is found to be linear in (H-γZaV/t_B)/(k_BT), where H, γ, Z, a, t_B and k_B are an activation energy, a parameter, charge, tunnel barrier lattice constant and thickness, and Boltzmann constant. T is the ambient plus Joule heating temperature of the tunnel barrier.

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2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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