基于SOI横向PIN二极管的低功耗高线性温度传感器

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804382

M. de Souza, M. Pavanello, D. Flandre

{"title":"基于SOI横向PIN二极管的低功耗高线性温度传感器","authors":"M. de Souza, M. Pavanello, D. Flandre","doi":"10.1109/S3S.2016.7804382","DOIUrl":null,"url":null,"abstract":"This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low power highly linear temperature sensor based on SOI lateral PIN diodes\",\"authors\":\"M. de Souza, M. Pavanello, D. Flandre\",\"doi\":\"10.1109/S3S.2016.7804382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

这项工作提出了一种高度线性的温度传感器，采用SOI横向PIN二极管实现，适用于低功耗应用，偏置于I-V特性的指数区域。实验结果显示，温度范围在150 K和400 K之间，表明取决于所选的偏置电流，与单个SOI PIN二极管相比，线性度可以得到改善。仿真结果表明，在保持高线性度的前提下，该传感器可以扩展低温度和高温度的传感范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low power highly linear temperature sensor based on SOI lateral PIN diodes

This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

自引率

0.00%

发文量