W. Koelmans, T. Bachmann, F. Zipoli, A. Ott, C. Dou, A. Ferrari, O. Cojocaru-Mirédin, S. Zhang, C. Scheu, M. Wuttig, V. K. Nagareddy, M. Craciun, A. Alexeev, C. Wright, V. Jonnalagadda, A. Curioni, A. Sebastian, E. Eleftheriou
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Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.
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